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Fig. 6 | Nanoscale Research Letters

Fig. 6

From: Plasma-Enhanced Chemical Vapor Deposition of Acetylene on Codeposited Bimetal Catalysts Increasing Graphene Sheet Continuity Under Low-Temperature Growth Conditions

Fig. 6

Schematic diagram of ICPCVD growth in which we see a shift towards a surface dominated mechanism. This shift is caused by ionization of C atoms that act as high-energy graphene nucleation sites once they reach the catalyst surface and allows for the use of a thinner catalyst as there is less absorption which leads to overproduction of graphene during cooling

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