Fig. 2From: Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctionsa Evolution of the series resistance Rs versus the alumina thickness. b Experimental values of Rs and simulated one Rsimu calculated for ϕB = 2.08 and 3.5 eV versus the alumina thickness d (nm)Back to article page