Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

Liu, Kangping; Cristini-Robbe, Odile; Elmi, Omar Ibrahim; Wang, Shuang Long; Wei, Bin; Yu, Ingsong; Portier, Xavier; Gourbilleau, Fabrice; Stiévenard, Didier; Xu, Tao

doi:10.1186/s11671-019-3160-2

Table 1 Summary of alumina passivation effects on silicon p-n junctions

From: Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

Work’s reference	Technique of deposition	Temperature (°C)	Type of materials	Thermal treatment	Optimized thickness	Physical parameters
Hoex et al. [10]	Plasma-assisted (PA) ALD	200	p-type, 2.0 Ω·cm n-type, 1.9 Ω·cm	30 min, 425 °C, N₂	7 nm	Se < 5 cm/s on n- and p-types
Hoex et al. [11]	PA ALD	200	n-type, 1.9 Ω·cm	30 min, 425 °C, N₂	6–32 nm	Life time τ_e 0.4 to 1 ms
Schmidt et al .[12]	PA ALD + 75 nm PECVD SiN_x	200	p-type, 1.5 Ω·cm	30 min, 425 °C, N₂	3.6 nm	Se < 22 cm/s
Dingemans et al. [13]	PA ALD + 70 nm PECVD SiN_x	200	n-type, 2 Ω·cm	425 °C, 30 min, N₂	30 nm	Se < 3 cm/s
Terlinden et al. [14]	PA ALD	200	p-type, 2 Ω·cm	400 °C, 10 min, N₂	5–20 nm 2–5 nm	Se = 20 cm/s Se increases up to 70 cm/s
Dingemans et al. [15]	PA ALD	200	n-type, 3.5 Ω·cm	425 ± 50 °C, 30 min, N₂	5–30 nm < 5 nm	Se_min = 0.8 cm/s Se_min = 2.5 cm/s
Dingemans et al. [15]	Thermal ALD	200	n-type, 3.5 Ω·cm p-type, 2.2 Ω·cm	375 ± 50 °C	10–30 nm < 10 nm	n-type: Se_min = 2 cm/s p-type: Se_min = 3–4 cm/s
Werner et al. [16]	Thermal ALD	200	p-type, 1.3 Ω·cm	425 °C, 15 min, N₂	> 10 nm	Se < 200 cm/s
Richter et al. [17]	PA ALD + 70 nm PECVD SiN_x	230	p-type, 1 Ω·cm	350–450 °C, 10 min, N₂	0.5–3 nm	Se = 40 cm/s, τ_e = 1 ms, emitter saturation current Joe = 30 fA/cm²
Zielke et al. [18]	PA ALD	200	n⁺	425 °C, 15 min, N₂	0.24 nm	PCE = 21%, Joe = 174 fA/cm²
Garcia-Alonso et al. [19]	PA ALD	200	n-type, 3.5 Ω·cm p-type, 2.5 Ω·cm	400 °C, 5–10 min, N₂	1–2 nm > 3 nm	Se = 100–700 cm/s Se < 4 cm/s
Kotipalli et al. [20]	PA and thermal ALD + PECVD SiO₂ (20 nm) or SiNx (20 nm)	250	p-type, 1–3 Ω·cm	432 °C, 30 min, N₂/H₂	15 nm	Se = 3 cm/s
Albadri [21]	PA ALD	200	p-type, 13 Ω·cm	400 °C, 30 min, N₂	20 nm	Se = 15 cm/s
Deckers et al. [22]	Thermal ALD	200	n-type, 0.8–5 Ω·cm p-type, 2 Ω·cm	500 °C, 30 min, N₂	25 cycles	Life time 400 μs, for n- and p-type
van de Loo et al. [23]	PA ALD for alumina and SiO₂ + 70 nm PECVD SiNx	200	p⁺ and n⁺	400 °C, 10 min, N₂	SiO₂ 0–14 nm Alumina 30 nm	For n⁺, Joe = 50 fA/cm² For p⁺, Joe < 54 fA/cm²

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