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Table 2 A prefactor deduced from Rs measured for d = 1.9 nm and calculated for the extrema values of ϕB (2.08 and 3.5 eV)

From: Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

ϕB (eV)

2.08

3.5

A (Ω)

1.34 × 10−11

6.19 × 10−15

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