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Table 2 Description of surface chemical treatments and metal layers deposited on GaAs (110) substrates for GIXRD analysis

From: Optimization of Ohmic Contacts to p-GaAs Nanowires

Sample#

Oxide removal

Surface passivation

Metal layers

S1

HCl:H2O

Ti (20 nm)

S2

HCl:H2O

(NH4)2Sx

Ti (20 nm)

S3

HCl:H2O

(NH4)2Sx

Pt (5 nm)

S4

HCl:H2O

(NH4)2Sx

Pt/Ti (5/20 nm)

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