Fig 2From: Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial HeterostructuresVariation of the side facets of the <100> oriented nanowires with the basic growth parameters. The series along each row correspond to variation in (a) growth temperature, (b) V/III ratio, (c) TMIn flow rate (while keeping V/III constant) with respect to the standard sample grown with growth conditions given in Table 1 in methods section. The white arrow in (a)iv indicates the thinner base. Scale bars are 100 nm.Back to article page