Fig. 2
From: Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms
Photoelectric response to telecommunication band (wavelength 1550 nm) of multilayer Bi2O2Se–based photodetector. a Schematic 3D view of Bi2O2Se-based photodetector under illumination. b I-V curves of Bi2O2Se-based photodetector under different light intensities. c Time-dependent photoresponse behaviors of Bi2O2Se device under 1550-nm light illumination (P = 0.26 uW). The inset shows an ultrafast photo response of the device. d Photocurrent and photoresponsivity of Bi2O2Se-based photodetector under different light intensities