Fig. 4
From: Near-Infrared Photoelectric Properties of Multilayer Bi2O2Se Nanofilms
Physical mechanism of multilayer Bi2O2Se–based photodetector. a The behavior of photo-generated charge carriers of multilayer Bi2O2Se-based photodetector. Here, EF is the Fermi level energy, EC is the minimum conduction band, EV is the maximum valence band. b The recombination process (“on” state to “off state”) of Bi2O2Se-based photodetector. Here, CB is conduction band, CV is valence band, Evac is vacuum energy, EA is electronic affinity