Fig. 3
From: UV-Visible Photodetector Based on I-type Heterostructure of ZnO-QDs/Monolayer MoS2
a I–V characteristics of the ZnO-QDs/MoS2 photodetector under different illumination power densities. Inset is the higher magnification I–V characteristics (negative voltage) under dark and different illumination power densities. b 3D responsivity map of the ZnO-QDs/MoS2 photodetector. c Power intensity-dependent photocurrent (red) and responsivity (R, green) under an excitation wavelength of 532 nm at Vds = 1 V. d Power intensity-dependent external quantum efficiency (EQE, red) and specific detectivity (D*, green) at Vds = 1 V