Fig. 3From: Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping LayerThe transfer curves of the a-IGZO TFT device and those programmed a at different positive gate biases for a constant time of 80 ms and b at different negative gate biases for a constant time of 80 msBack to article page