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Fig. 7 | Nanoscale Research Letters

Fig. 7

From: Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer

Fig. 7

High-resolution O1s XPS spectra of the as-deposited ZnO film and those annealed at 250 °C in O2 and N2, respectively. O1 and O2 correspond to O2− ions bound with Zn2+ and oxygen vacancies, respectively. O3 is attributed to chemisorbed oxygen element (–OH, etc). To remove unintentionally surface contaminants, all the samples were etched with in situ Ar ion bombardment

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