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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency

Fig. 3

a Breakdown voltage, b vertical electric field distribution of the SACM APDs biased at − 160 V, c photocurrent-voltage characteristics under 280 nm illumination, and d spectral response characteristics of the SACM APDs biased at − 100 V for reference device and devices A1 to A4 with different doping concentration of n-type ohmic contact layer, respectively. Inset figure in a shows the calculated current-voltage characteristics and the multiplication gain for device A1. Inset figure in c shows photocurrent for reference device and devices A1 to A4 biased at − 100 V

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