Skip to main content
SpringerLink
Account
Fig. 4 | Nanoscale Research Letters

Fig. 4

From: Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency

Fig. 4

a Breakdown voltage, b vertical electric field distribution of the SACM APDs biased at − 160 V, c photocurrent-voltage characteristics under 280 nm illumination, d spectral response characteristics, and e carrier concentration profiles in the multiplication layer of the SACM APDs biased at − 100 V for reference device and devices M1 to M4 with different thicknesses of absorption layer, respectively. Inset figure in a shows the calculated current-voltage characteristics and the multiplication gain for device M1. Inset figure in c shows photocurrent for reference device and devices M1 to M4 biased at − 100 V

Back to article page

Search

Navigation