Fig. 6From: Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection EfficiencyEnergy band diagrams of charge control layer, absorption layer and n-type ohmic contact layer for a device B1 and b device B4, c hole concentration profiles under 280 nm illumination for device B1 and B4. Data are calculated at the reverse voltage of 100 VBack to article page