Fig. 7From: Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiencya Breakdown voltage, b vertical electric field distribution of the SACM APDs biased at − 160 V, c photocurrent-voltage characteristics under 280 nm illumination, and d spectral response characteristics of the SACM APDs biased at − 100 V for reference device and devices N1 to N4 with different thicknesses of charge control layer, respectively. Inset figure in a shows the calculated current-voltage characteristics and the multiplication gain for device N1. Inset figure in c shows photocurrent for reference device and devices N1 to N4 biased at − 100 VBack to article page