Table 1 Structural parameters for the n-type contact layer of the investigated devices
Structural information for the n-type contact layer | |||
---|---|---|---|
Device number | Doping type, doping concentration, thickness | Device number | Doping type, doping concentration, thickness |
Device L1 | N+, 1 × 1019 cm−3, 0.1 μm | Device A1 | N+, 1 × 1018 cm−3, 0.3 μm |
Device L2 | N+, 1 × 1019 cm−3, 0.2 μm | Device A2 | N+, 5 × 1018 cm−3, 0.3 μm |
Reference device | N+, 1 × 1019 cm−3, 0.3 μm | Reference device | N+, 1 × 1019 cm−3, 0.3 μm |
Device L3 | N+, 1 × 1019 cm−3, 0.4 μm | Device A3 | N+, 2 × 1019 cm−3, 0.3 μm |
Device L4 | N+, 1 × 1019 cm−3, 0.5 μm | Device A4 | N+, 5 × 1019 cm−3, 0.3 μm |