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Table 1 Structural parameters for the n-type contact layer of the investigated devices

From: Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency

Structural information for the n-type contact layer

Device number

Doping type, doping concentration, thickness

Device number

Doping type, doping concentration, thickness

Device L1

N+, 1 × 1019 cm−3, 0.1 μm

Device A1

N+, 1 × 1018 cm−3, 0.3 μm

Device L2

N+, 1 × 1019 cm−3, 0.2 μm

Device A2

N+, 5 × 1018 cm−3, 0.3 μm

Reference device

N+, 1 × 1019 cm−3, 0.3 μm

Reference device

N+, 1 × 1019 cm−3, 0.3 μm

Device L3

N+, 1 × 1019 cm−3, 0.4 μm

Device A3

N+, 2 × 1019 cm−3, 0.3 μm

Device L4

N+, 1 × 1019 cm−3, 0.5 μm

Device A4

N+, 5 × 1019 cm−3, 0.3 μm

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