Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency

Table 3 Structural parameters for the charge control layer of the investigated devices

Structural information for the charge control layer
Device number	Doping type, doping concentration, thickness	Device number	Doping type, doping concentration, thickness
Device N1	N, 5 × 10¹⁸ cm⁻³, 0.1 μm	Device C1	N, 2 × 10¹⁷ cm⁻³, 0.2 μm
Reference device	N, 5 × 10¹⁸ cm⁻³, 0.2 μm	Device C2	N, 5 × 10¹⁷ cm⁻³, 0.2 μm
Device N2	N, 5 × 10¹⁸ cm⁻³, 0.3 μm	Device C3	N, 2 × 10¹⁸ cm⁻³, 0.2 μm
Device N3	N, 5 × 10¹⁸ cm⁻³, 0.5 μm	Reference device	N, 5 × 10¹⁸ cm⁻³, 0.2 μm
Device N4	N, 5 × 10¹⁸ cm⁻³, 0.7 μm	Device C4	N, 7 × 10¹⁸ cm⁻³, 0.2 μm