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Table 6 Surface electric field for the investigated devices

From: Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency

Device number

Device E1

Reference device

Device E2

Device E3

Device E4

Device E5

Surface electric field (V/cm)

2.90 × 105

3.94 × 105

4.96 × 105

9.89 × 105

1.86 × 106

2.03 × 106

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