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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Effect of Joule Heating on Resistive Switching Characteristic in AlOx Cells Made by Thermal Oxidation Formation

Fig. 3

a The I-V curve for the unannealed Pt/Al/ITO device. The inset shows a schematic diagram of the electrical measurement. The Pt top electrode is the applied bias voltage, and the ITO is grounded. b The 50–cycle I-V curve for unipolar switching (annealed for 4 h). The dashed line denotes the compliance current Icc = 10 mA. The red line indicates the first set process and reset process. The arrows indicate the voltage sweeping direction. The read voltage is set to 0.1 V. The inset shows the endurance characteristic. c The 50-cycle I-V curve for bipolar switching (annealed for 4 h). The inset shows the endurance characteristics. The read voltage is set to 0.1 V

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