Fig. 1

The synaptic devices based on ReS₂ 2D material. a Crystal structure of monolayer ReS₂. b Optical image of a five-layer ReS₂ flake. Inset: source and drain electrodes patterned on the ReS₂ flake; direction b is taken as the direction of channel current. c The AFM image and height profile of the ReS₂ flake. d Schematic diagram of a 2D material ReS₂ synaptic device. The thickness of the Al₂O₃, ZrO₂, and Al₂O₃ stack (from bottom) is 12 nm, 4 nm, and 4 nm, respectively