Fig. 2
From: ReS2 Charge Trapping Synaptic Device for Face Recognition Application
Electrical properties of the ReS2 synaptic devices. a Transfer characteristic (Ids–Vbg) of the ReS2 synaptic devices at a fixed Vds changing from 100 to 700 mV with the step of 100 mV. b Output characteristic (Ids–Vds) of the ReS2 synaptic devices at a fixed Vbg changing from − 2 to 2 V with the step of 1 V. c Hysteresis loop at Vbg of ± 5 V sweep ranges. Vds was kept at 100 mV. d Energy band diagram of the ReS2 synaptic devices with positive back gate voltage. Inset: energy levels of Al2O3 and ZrO2. e Energy band diagram of the ReS2 synaptic devices with negative back gate voltage