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Fig. 6 | Nanoscale Research Letters

Fig. 6

From: Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Fig. 6

a Endurance cycles of HfOx-based RRAM at different SET voltage and cell size b with different thickness (T5= 2 nm, T20= 10 nm) at 2.5 V set voltage. c Resistance distribution of 1-kb array obtained from Weibull plots under different endurance cycles. d 100 k cycles endurance of 2-Mb-Ta2O5-based array; Reprinted from refs [102104]

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