Fig. 8From: Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and ApplicationsUniformity improvement of Al buffered HfO x RRAM compared to HfO x-based RRAM array. a Statistical distribution of SET voltage (Vset) obtained from 100 DC sweep cycles. b HRS and LRS statistical distribution for 100 pulse sweep cycles; reprinted from ref. [59]Back to article page