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Table 4 RRAM devices exhibiting multiple resistance states

From: Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications

Reference

RRAM device

Resistance states

Method used

[22]

W/ HfO2/ Zr/ TiN

4 states: 1HRS, 3LRS

Varying Vreset

[23]

TiN/ HfO2/ Pt

8 states: 7HRS, 1LRS

Varying Vreset

[27]

Ti/ TiN/ TiO 2−x/ Au

6 states: 1HRS, 5LRS

Varying Icc

[29]

Ti/ TiO 2−x/ Au

7 states: 1HRS, 6LRS

Varying Icc

[32]

Pt/ TaO x/ TiN

4 states: 1HRS, 3LRS

Varying Icc

[36]

W/ Ta/ TaO x/ Pt

8 states: 1HRS, 7LRS

Varying Icc

[41]

Ag/ a-Zno/ Pt

6 states: 1HRS, 5LRS

Varying Icc

[43]

Au/ Zno/ ITO

4 states: 1HRS, 3LRS

Varying Icc

[47]

ITO/ Zn2TiO4/ Pt

4 states: 1HRS, 3LRS

Varying Icc

[89]

Au/Ti/ TiO 2−x/Au

6 states: 1HRS, 5LRS

Varying Icc

[83]

TiN/ HfO x/AlO x/ Pt

4 states: 3HRS, 1LRS

Varying Vreset

[122]

Ru/ Ta2O5/TiO2/ Ru

4 states: 3HRS, 1LRS

Varying Vreset

[124]

Pt/W/ TaO x/ Pt

8 states: 7HRS, 1LRS

Varying Vreset

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