Table 4 RRAM devices exhibiting multiple resistance states
Reference | RRAM device | Resistance states | Method used |
---|---|---|---|
[22] | W/ HfO2/ Zr/ TiN | 4 states: 1HRS, 3LRS | Varying Vreset |
[23] | TiN/ HfO2/ Pt | 8 states: 7HRS, 1LRS | Varying Vreset |
[27] | Ti/ TiN/ TiO 2−x/ Au | 6 states: 1HRS, 5LRS | Varying Icc |
[29] | Ti/ TiO 2−x/ Au | 7 states: 1HRS, 6LRS | Varying Icc |
[32] | Pt/ TaO x/ TiN | 4 states: 1HRS, 3LRS | Varying Icc |
[36] | W/ Ta/ TaO x/ Pt | 8 states: 1HRS, 7LRS | Varying Icc |
[41] | Ag/ a-Zno/ Pt | 6 states: 1HRS, 5LRS | Varying Icc |
[43] | Au/ Zno/ ITO | 4 states: 1HRS, 3LRS | Varying Icc |
[47] | ITO/ Zn2TiO4/ Pt | 4 states: 1HRS, 3LRS | Varying Icc |
[89] | Au/Ti/ TiO 2−x/Au | 6 states: 1HRS, 5LRS | Varying Icc |
[83] | TiN/ HfO x/AlO x/ Pt | 4 states: 3HRS, 1LRS | Varying Vreset |
[122] | Ru/ Ta2O5/TiO2/ Ru | 4 states: 3HRS, 1LRS | Varying Vreset |
[124] | Pt/W/ TaO x/ Pt | 8 states: 7HRS, 1LRS | Varying Vreset |