Reference | RRAM device | Resistance states | Method used |
---|

[22] | W/ HfO_{2}/ Zr/ TiN | 4 states: 1HRS, 3LRS | Varying *V*_{reset} |

[23] | TiN/ HfO_{2}/ Pt | 8 states: 7HRS, 1LRS | Varying *V*_{reset} |

[27] | Ti/ TiN/ TiO _{2−x}/ Au | 6 states: 1HRS, 5LRS | Varying *I*_{cc} |

[29] | Ti/ TiO _{2−x}/ Au | 7 states: 1HRS, 6LRS | Varying *I*_{cc} |

[32] | Pt/ TaO _{x}/ TiN | 4 states: 1HRS, 3LRS | Varying *I*_{cc} |

[36] | W/ Ta/ TaO _{x}/ Pt | 8 states: 1HRS, 7LRS | Varying *I*_{cc} |

[41] | Ag/ a-Zno/ Pt | 6 states: 1HRS, 5LRS | Varying *I*_{cc} |

[43] | Au/ Zno/ ITO | 4 states: 1HRS, 3LRS | Varying *I*_{cc} |

[47] | ITO/ Zn_{2}TiO_{4}/ Pt | 4 states: 1HRS, 3LRS | Varying *I*_{cc} |

[89] | Au/Ti/ TiO _{2−x}/Au | 6 states: 1HRS, 5LRS | Varying *I*_{cc} |

[83] | TiN/ HfO _{x}/AlO _{x}/ Pt | 4 states: 3HRS, 1LRS | Varying *V*_{reset} |

[122] | Ru/ Ta_{2}O_{5}/TiO_{2}/ Ru | 4 states: 3HRS, 1LRS | Varying *V*_{reset} |

[124] | Pt/W/ TaO _{x}/ Pt | 8 states: 7HRS, 1LRS | Varying *V*_{reset} |