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Fig. 1 | Nanoscale Research Letters

Fig. 1

From: A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors

Fig. 1

(a) GIXRD patterns of HZO thin films deposited using TDMAH/TDMAZ (black curve) and TEMAH/TEMAZ (red curve), the reference patterns taken from literature for the monoclinic, tetragonal, and orthorhombic phases are attached in the bottom panels. (b) The planar SEM image of TDMA HZO films and (c) the grain size distribution of TEMA (red; reproduced from Ref. [15]), TDMA (black) HZO. (d) The depth profile of the TDMA HZO thin films analyzed using time-of-flight Auger electron spectroscopy, and (e) the enlarged low concentration region of the HZO film part. Average C concentration of TDMA (black dash-dot line), TEMA (red dash line; reproduced from Ref. [12]), HZO is presented

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