Fig. 3From: A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) PrecursorsThe changes of (a) TDMA HZO and (b) TEMA HZO (reproduced from Ref. [5]) in interfacial capacitance (Ci), contact resistance (Rc), and coercive field (Ec) values with increasing number of fatigue pulsesBack to article page