From: A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis(dimethylamino) Precursors
Melting point (°C)
Temp (0.1Torr; °C) [17]
Temp (1Torr; °C) [17]
State (@canister temp; °C)
Vaporization type
Note
TDMAH
30 [17]
48
75
Liquid (70)
Vapor pressure
Fast exhaustion
TDMAZ
60 [17]
49
77
TEMAH
− 50 [27]
83
113
Liquid (50)
Bubbler
TEMAZ
− 20 [28]
76
106
