Fig. 7From: Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on SapphireaIphoto-Vbias, bIdark-Vbias, and c PDCR characteristics of the as-deposited poly-(AlxGa1–x)2O3 film and the samples annealed at different temperatures under the illumination intensity of 0.5 mW/cm2 and λ of 254 nmBack to article page