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Table 1 The grain size of polycrystalline films at different annealing temperatures

From: Effects of Post Annealing on Electrical Performance of Polycrystalline Ga₂O₃ Photodetector on Sapphire

Temperature (°C)	FWHM (°)	Grain size (nm)
As-deposited	0.49135	15.99
800	0.47789	16.22
900	0.37031	20.93
1000	0.28513	27.18
1100	0.29602	26.18

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