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Table 2 Comparison of the calculated Al content and Eg of poly-(AlxGa1–x)2O3 after thermal annealing according to HRXRD in Fig. 3 and experimental results of transmittance spectra

From: Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

 

800 °C

900 °C

1000 °C

1100 °C

Substitutional Al composition

0.02

0.14

0.22

0.35

CalculatedEg

4.67 eV

4.79 eV

4.90 eV

5.13 eV

ExperimentalEg

4.72 eV

4.78 eV

4.81 eV

5.10 eV

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