Table 4 The comparison of the I_dark, rise time (τ_r) and decay time (τ_d) of solar-blind photodetectors based on β-, α-, and ε-Ga₂O₃ thin films synthesized by different techniques

Poly-Ga₂O₃

RFMS

0.0033 (5 V)

0.148/0.672

0.067/0.634

This work

β-Ga₂O₃

RFMS

0.11 (10 V)

0.31/1.52

0.05/0.91

[30]

β-Ga₂O₃

Laser MBE

80 (10 V)

0.86

1.02/16.61

[6]

β-Ga₂O₃

MBE

4 (20 V)

3.33

0.4

[31]

β-Ga₂O₃

PLD

430 (20 V)

0.87/10.81

0.54/13.98

[2]

β-Ga₂O₃

MOCVD

34 (10 V)

0.48

0.18

[32]

β-Ga₂O₃

Sol-gel

0.758 (30 V)

0.1/0.18

0.1/1.85

[26]

α-Ga₂O₃

MOCVD

8.1×10⁻⁵ (12 V)

Not given

0.042

[33]

ε-Ga₂O₃

MOCVD

0.037 (200 V)

2.5

0.4/2.6

[34]