Fig. 1From: Infrared photovoltaic detector based on p-GeTe/n-Si heterojunctiona Magnetron sputtering of GeTe film on Si substrate. b Post-annealing of the GeTe film. c Optical images of as-deposited and d annealed GeTe films on quartz substrate. e–f TEM images and FFT patterns (inset) of the annealed GeTe film. g Line profiles of the lattice fringes of (202) and (220) crystal planes as shown in the top and bottom panels, respectively. h–j Schematic diagrams of the crystal structuresBack to article page