Fig. 2
From: Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
a–b Normalized Raman spectra of GeTe films before and after annealing, respectively. c UV-Vis-NIR absorption spectra of the GeTe films before and after annealing. (Inset) Plot of α2 versus photon energy (hν) of the two GeTe films. d Optical images of the annealed GeTe film for AFM measurement. e AFM image and line profiles (inset) for thickness measurement of the annealed GeTe film. f XRD spectra of the GeTe films before and after annealing. g–i XPS spectra of Ge 2p, Ge 3d, and Te 3d core levels of the annealed GeTe film