Fig. 1
From: Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection
Schematic of an in-plane WSe2 homojunction. a Structure of the device. b Optical image of the device. Part of WSe2 contacts h-BN flake while the other part contacts Si/SiO2 substrate. c AFM image of the device. The white dotted lines indicate the positions where the thickness of h-BN (left) and WSe2 (right) are extracted. For the channel between E1 and E2, the average width (length) is ~ 19.15 (~ 6.33) μm. For the channel between E2 and E3, the average width (length) is ~ 23.15 (~ 5) μm. For the channel between E3 and E4, the average width (length) is ~ 22 (~ 5.38) μm. d, e Height profiles of WSe2 and h-BN flakes. f Raman spectra of WSe2 and h-BN flakes with 532 nm laser excitation