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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection

Fig. 3

Photoresponse performance of the homojunction acquired between E2 and E3. a Drain current as a function of source-drain voltage applied on electrodes E2 and E3 (see the inset) with variable light power intensity (637 nm). b Formation mechanism of the homojunction at Vg = 0 V and Vd = 0 V. c Responsivity as a function of light power. d, e Temporal response of the device acquired at Vd = 0 V for 637 nm illumination. An oscilloscope was used to monitor the time dependence of the current

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