Fig. 4
From: Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection
Effect of Schottky junction on photoresponse. aId-Vd curves of WSe2-h with source-drain voltage applied on electrodes E3 and E4 (see the inset) under light illumination (637 nm). bId-Vd curves of WSe2-S with source-drain voltage applied on electrodes E1 and E2 (see the inset) under light illumination (637 nm). c Schematic band diagram of the homojunction device with asymmetric Schottky contacts, i.e., E2/WSe2-S and E3/WSe2-h, at zero bias