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Table 1 Core indexes of AlGaN channel HEMTs (heterostructures) in previous reports and this work

From: High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

Institution

μ (cm2/Vs)

ns (1013 cm− 2)

IMAX (mA/mm)

VT (V)

Vb,standard (V/μm)

Mitsubishi [6]

 

0.53

114

 

153

Mitsubishi [7]

645

0.22

145

− 1.0

180

Mitsubishi [8]

460

0.79

340

− 4.0

170

Sandia National Laboratories [9]

250

0.60

2

− 4.9

82

USC [10]

284

1.15

250

− 10

99

XDU [11]

801

0.39

200

− 4.0

104

Sandia National Laboratories [12]

390

0.72

160

− 6.0

186

XDU [13]

801

0.39

275

− 2.8

110

XDU [14]

807

0.61

849

− 4.3

82

XDU [15]

1179

0.61

768

1.0

103

This work

1130

1.30

460

− 9.2

142.5

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