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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys

Fig. 3

Cross-sectional HAADF image (left) of the p-i-n sample S1, with marked GaAs and GaAsBi layers. Darker regions within GaAsBi are phase-separated domains. The line profile (right) shows EELS bulk plasmon peak energy shift, EGaAsBi-EGaAs, relative to the GaAs buffer layer. The profile is closely aligned with the simultaneously acquired HAADF image on the left. EELS data pixels are fully binned in the horizontal direction and thus indicate spatially averaged values. The scale bar is 100 nm, and it also applies to the vertical axis of the EELS profile

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