Fig. 4
From: Atomic-Resolution EDX, HAADF, and EELS Study of GaAs1-xBix Alloys
a HAADF image of GaAsBi sample S2 near the interface with the GaAs buffer layer, grown on offcut (001) Ge. Fourier transform on the top right shows pair of peaks indicating ordering on the single set of (\( \overline{1} \)11) planes. b An image formed from (a) using the pair of superlattice 1/2[\( \overline{1} \)11]* Bragg spots. c–e Wiener filtered EDX images of the GaAsBi sample, with Bi-M, As-K, and Ga-K X-ray emissions as indicated. Note that in EDX data, the crystallographic directions are rotated to align the ordered (\( \overline{1} \)11) planes horizontally. f Horizontally summed vertical X-ray counts profile of the raw As-K and Bi-M signal. Two aligned data sets are combined to obtain the profile