Fig. 1
From: Dynamic Control of High-Range Photoresponsivity in a Graphene Nanoribbon Photodetector
a A schematic illustration of the GRN photodetector. It is similar to the FET device comprised of the source and the drain electrode on the Si/SiO2 substrate with a lightly doped Si wafer acting as a back gate. The incident light was modulated by an optical chopper of variable frequency. b SEM image of the GRN photodetector device. c Current-voltage (I-V) characteristics of the GRN device under different back-gate voltage. Inset: I-V characteristics of the device under dark (red line) or illumination with a frequency of 10 Hz (blue line). d The source-drain current versus the back-gate voltage bias of GNR photodetector at room temperature. Inset: schematic diagram of GNR band structure