Fig. 1From: ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipolesa Schematic of the fabricated TaN/ZrO2/Ge FeFET. b, c, and d HRTEM images of the TaN/ZrO2/Ge stacks with different ZrO2 thicknesses. The samples underwent an RTA at 500 °C for 30 sBack to article page