Fig. 4
From: ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles
aPr vs. the number of ms-pulse sweeping cycles for 4 nm ZrO2 capacitors with different RTA temperatures. bPr vs. number of ms-pulse sweeping cycles for the ZrO2 capacitors after annealing at 500 °C