Fig. 7
From: ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles
aIDS-VGS curves of the 2.5, 4, and 9 nm-thick ZrO2 FeFETs for the two polarization states with 100 ns P/E pulses. The devices underwent an RTA at 500 °C. b FeFET with 4 nm ZrO2 has an improved endurance compared to the 2.5 and 9 nm ZrO2 transistors