Fig. 9From: ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipolesa The evolution of IDS-VGS curves for the two polarization states for the 2.5, 4, and 9 nm-thick ZrO2 FeFETs underwent a RTA at 500 °C. b The 4 nm ZrO2 device has an improved retention performance compared to the transistors with 2.5 and 9 nm-thick ZrO2Back to article page