Variation on the Microstructure and Mechanical Properties of Ti-Al-N Films Induced by RF-ICP Ion Source Enhanced Reactive Nitrogen Plasma Atmosphere

Table 1 Growth parameters of Ti-Al-N films during deposition progress

Samples	N₂ flows (sccm)	RF-ICPIS power (W)	Ar flows (sccm)	DC current (A)	Total gas pressure (Pa)	Deposition temperature (^oC)	Film thickness (μm)
S1	5	50	15	0.4	0.5	200	0.86
S2	10	50	15	0.4	0.5	200	0.94
S3	15	50	15	0.4	0.5	200	1.00
S4	20	50	15	0.4	0.5	200	1.33
S5	25	50	15	0.4	0.5	200	1.56