Fig. 6From: Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel ThicknessThe impacts of Ls on the a transfer curves, bVonset and BTBT rate, c average SS, and d drain current in on/ambipolar state, Ls is the lateral distance from the source region to the step, Ls = 0 nm represents the conventional DG TFET with corresponding tsi2 and Ls = 50 nm represents the conventional DG TFET with corresponding tsi1.Back to article page