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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory

Fig. 2

Measured P vs. V characteristics of the Al2O3 capacitors with different electrodes. a, b, and c showing the  P-V curves of TaN/Ti/Al2O3/Ge, TaN/Al2O3/Ge, and W/Al2O3/Ge, respectively, with a 3.6-nm tAlO. d and e showing that the Psat is enhanced(reduced) by using TaN(Si) as the bottom electrode instead of Ge. f TaN/Al2O3(6 nm)/Ge capacitor has a higher Vc and a similar Psat compared to the 3.6-nm-thick device in b. g and h Endurance measurements showing no degradation of Pr and Vc observed after 104 sweeping cycles for a TaN/Al2O3(3.6 nm)/Ge capacitor

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