Fig. 5From: Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memorya Measured IDS-VGS curves of a 3.6-nm-thick Al2O3 NVFET for the initial and two polarization states. An MW of 0.44 V is obtained. b Endurance measurement demonstrates that no MW degradation is observed after 106 P/E cyclesBack to article page