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Fig. 1 | Nanoscale Research Letters

Fig. 1

From: Modulation of Magnetoresistance Polarity in BLG/SL-MoSe2 Heterostacks

Fig. 1

a Scheme of device fabrication where ferromagnetic Co and NiFe metals were deposited on the top and bottom, respectively. b The change in R vs B traces before annealing at different temperatures (with I = 10 μA). (Inset) Current-voltage characteristics of the BLG at different temperatures are linear and indicate an ohmic contact. c Temperature-dependent MR values of the BLG before and after annealing at fixed ac current. (Inset) The MR vs B of Co/BLG/NiFe junction after annealing at T = 4 K. d Schematic drawing of spin-dependent density of states for BLG. Band splitting gives a difference in spin-up and spin-down carriers at EF. The thick dashed red line in the middle shows decoupling of van der Waals-bonded BLG

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