Fig. 2From: Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes—Thinning the Quantum Barriers to Manage the Current SpreadingNumerically calculated hole concentration profiles in MQW regions for μLEDs A, B, and C. Data are calculated at the current density of 40 A/cm2. Inset figure shows the position along which the date profiles are capturedBack to article page